32N5884

Technical Characteristics

• Overall Length

  0.375 inches nominal

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  80.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

• Power Rating Per Characteristic

  200.0 watts maximum collector power dissipation

• Special Features

  junction pattern arrangement: pnp

• Inclosure Material

  metal

• Overall Diameter

  0.875 inches maximum

• Mounting Facility Quantity

  2

• Internal Configuration

  junction contact

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Method

  unthreaded hole

• Current Rating Per Characteristic

  7.50 amperes maximum base current, dc and 25.00 amperes maximum collector current, dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case