356A7377P2

Technical Characteristics

• Special Features

  high current n-channel, insulated gate bipolar transistor with added mil-prf-19500 quality assurance testing

• Mounting Facility Quantity

  1

• End Item Identification

  circuit card assembly; fighter aircraft-first (f18 e/f)

• Criticality Code Justification

  agav

• Voltage Rating In Volts Per Characteristic

  20.0 maximum collector to emitter voltage, dc

• Current Rating Per Characteristic

  35.00 amperes source cutoff current maximum

• Semiconductor Material

  silicon

• Overall Length

  0.790 inches minimum and 0.800 inches maximum

• Power Rating Per Characteristic

  150.0 watts small-signal input power, common-collector megawatts

• Part Name Assigned By Controlling Agency

  inavy: resistor, fixed, film; dwg: semiconductor, transistor, igbt, n-channel, silicon

• Overall Height

  0.249 inches minimum and 0.260 inches maximum

• Mounting Method

  unthreaded hole

• Terminal Type And Quantity

  3 pin

• Inclosure Material

  metal

• Overall Width

  0.540 inches nominal