841-03-PL REF DES Q3
Semiconductor Devices and Associated Hardware
TRANSISTOR
841-03-PL REF DES Q3
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
slot and slot and threaded hole
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End Item Identification
power unit, 0.8 kw, dc, 841-01.
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Special Features
vshort circuit rated ultrafast: optimized for high operating frequencies >5.0 khz, and short circuit rated to 10 us @ 125 deg. celsius, vge= 15 v. industry standard t0-247ac package. generation 4 insulated gate bipolar transistor.
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Power Rating Per Characteristic
160.0 watts small-signal input power, common-collector absolute
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Overall Length
33.9 millimeters minimum and 35.1 millimeters maximum
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Voltage Rating In Volts Per Characteristic
600.0 minimum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 18.0 minimum breakdown voltage, emitter to collector, base open
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Overall Width
15.3 millimeters minimum and 15.9 millimeters maximum
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Mounting Facility Quantity
3
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Terminal Type And Quantity
3 uninsulated wire lead