IXFN180N20

Semiconductor Devices and Associated Hardware

TRANSISTOR

IXFN180N20

5961-01-528-6119

5961 - Semiconductor Devices and Associated Hardware

Ixys Corporation

TRANSISTOR

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Technical Characteristics

  • Power Rating Per Characteristic

    700.0 watts collector power dissipation peak

  • Mounting Method

    slot and unthreaded hole

  • Overall Length

    1.496 inches minimum and 1.505 inches maximum

  • Terminal Type And Quantity

    4 screw

  • Current Rating Per Characteristic

    180.00 amperes source cutoff current maximum of standard range

  • Overall Width

    0.990 inches minimum and 1.001 inches maximum

  • Semiconductor Material

    silicon

  • Inclosure Material

    plastic

  • Mounting Facility Quantity

    2

  • Part Name Assigned By Controlling Agency

    hiperfet power mosfet

  • Voltage Rating In Volts Per Characteristic

    200.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source

  • Special Features

    single die mofset; n-channel enhancement mode

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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