8513345-110

Technical Characteristics

• Memory Capacity

  65536 bit 8192 word

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  16 input

• Time Rating Per Chacteristic

  250.00 nanoseconds maximum propagation delay time, low to high level output and 250.00 nanoseconds maximum propagation delay time, high to low level output

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Special Features

  program to cage 07187 truth table tt8513345-110

• Features Provided

  burn in and hermetically sealed and w/buffered output and high speed and w/enable and ultraviolet erasable

• Terminal Type And Quantity

  28 printed circuit

• Body Width

  0.605 inches maximum

• Body Length

  1.415 inches maximum

• End Item Identification

  f-15 avionics

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Part Name Assigned By Controlling Agency

  microcircuit, digital - cmos eprom msb

• Maximum Power Dissipation Rating

  790.0 milliwatts

• Voltage Rating And Type Per Characteristic

  5.0 volts maximum power source

• Body Height

  0.210 inches maximum