TE407A120600A
Semiconductor Devices and Associated Hardware
TRANSISTOR
TE407A120600A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Electrode Internally-Electrically Connected To Case
cathode
-
Inclosure Material
metal
-
Special Features
junction pattern arrangement:npn
-
Mounting Method
unthreaded hole
-
Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-base, emitter open and 120.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum emitter to base voltage, static, collector open
-
Mounting Facility Quantity
2
-
Current Rating Per Characteristic
1.00 amperes source cutoff current minimum and 30.00 amperes source cutoff current maximum
-
Semiconductor Material
silicon
-
Overall Width
1.050 inches maximum
-
Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector absolute
-
Internal Configuration
junction contact
-
Overall Height
0.250 inches minimum and 0.450 inches maximum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
-
Overall Length
1.573 inches maximum
-
Transfer Ratio
200.0 minimum static forward current transfer ratio, common-emitter
-
Terminal Type And Quantity
2 pin
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3