TE407A120600A

Semiconductor Devices and Associated Hardware

TRANSISTOR

TE407A120600A

5961-01-555-1087

5961 - Semiconductor Devices and Associated Hardware

Raytheon Systems Ltd

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    cathode

  • Inclosure Material

    metal

  • Special Features

    junction pattern arrangement:npn

  • Mounting Method

    unthreaded hole

  • Voltage Rating In Volts Per Characteristic

    120.0 maximum breakdown voltage, collector-to-base, emitter open and 120.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum emitter to base voltage, static, collector open

  • Mounting Facility Quantity

    2

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current minimum and 30.00 amperes source cutoff current maximum

  • Semiconductor Material

    silicon

  • Overall Width

    1.050 inches maximum

  • Power Rating Per Characteristic

    200.0 watts small-signal input power, common-collector absolute

  • Internal Configuration

    junction contact

  • Overall Height

    0.250 inches minimum and 0.450 inches maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air

  • Overall Length

    1.573 inches maximum

  • Transfer Ratio

    200.0 minimum static forward current transfer ratio, common-emitter

  • Terminal Type And Quantity

    2 pin

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

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