MMBT6517LT1G

Technical Characteristics

• Internal Configuration

  junction contact-double emitter

• Mounting Method

  terminal

• Special Features

  lead-free

• Overall Width

  0.047 inches minimum and 0.055 inches maximum

• Internal Junction Configuration

  npn

• Current Rating Per Characteristic

  100.00 milliamperes source cutoff current maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-236

• Semiconductor Material

  silicon

• Inclosure Material

  plastic

• Power Rating Per Characteristic

  300.0 milliwatts small-signal input power, common-collector absolute

• Overall Length

  0.110 inches minimum and 0.120 inches maximum

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Terminal Type And Quantity

  3 pin

• Voltage Rating In Volts Per Characteristic

  350.0 maximum collector to emitter voltage/static/base open

• Overall Height

  0.035 inches minimum and 0.044 inches maximum