MUR8100E
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
MUR8100E
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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~1
junction; reverse voltage to 1000 v
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Special Features
20 mj avalanche energy guaranteed; ultrafast 75 nanosecond recovery time; 175 degree celsius operating junction temperature; to-220 package; epoxy meets ul94 v-0 at 0.125 inches; low forward voltage; low leakage current; high temperature glass passivated
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