NSN: 5961-00-004-5921
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
junction pattern arrangement: npn
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Overall Diameter
0.380 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-111
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Semiconductor Material
silicon
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Internal Configuration
junction contact-darlington connected
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Terminal Type And Quantity
4 tab, solder lug
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Inclosure Material
metal
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Overall Length
1.218 inches maximum
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Mounting Method
threaded stud
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Overall Width Across Flats
0.424 inches minimum and 0.437 inches maximum
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Power Rating Per Characteristic
12.5 watts small-signal input power, common-collector minimum
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Thread Series Designator
unf
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, emitter-to-base, collector open
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Test Data Document
82577-928399 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)