NSN: 5961-00-011-3637
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.230 inches maximum
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Internal Configuration
field effect
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Channel Polarity And Control Type
p-channel junction type
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Mounting Method
terminal
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
15.0 maximum drain to source voltage and 30.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 25.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source
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Current Rating Per Characteristic
100.00 milliamperes maximum gate current and 500.00 milliamperes maximum drain current
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Power Rating Per Characteristic
400.0 milliwatts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Specification/Standard Data
80131-release5286 professional/industrial association specification
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
4 uninsulated wire lead