NSN: 5961-00-051-4823

Technical Characteristics

• Inclosure Material

  metal

• Overall Diameter

  1.250 inches maximum

• Internal Configuration

  junction contact

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Method

  threaded stud

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  6.00 amperes maximum base current, dc and 10.00 amperes maximum collector curren

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Test Data Document

  81349-mil-s-19500 specification

• Specification/Standard Data

  81349-mil-s-19500/248 government specification

• Overall Length

  1.230 inches maximum

• Mounting Facility Quantity

  1

• Internal Junction Configuration

  npn

• Nominal Thread Size

  0.190 inches

• ~1

  llector to emitter voltage, dc with specified circuit between base and emitter a

• ~2

  nd 65.0 maximum collector-to-emitter, substaining voltage, base open-circuited a

• ~3

  nd 10.0 maximum emitter to base voltage, static, collector open

• Voltage Rating In Volts Per Characteristic

  130.0 maximum collector to base voltage/static/emitter open and 130.0 maximum co

• ~1

  t, dc

• Power Rating Per Characteristic

  150.0 watts maximum collector power dissipation

• Thread Series Designator

  unf

• Terminal Type And Quantity

  2 pin and 1 threaded stud