NSN: 5961-00-057-4801
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Mounting Method
terminal
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Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter and 120.0 maximum static forward current transfer ratio, common-emitter
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 uninsulated wire lead
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Voltage Rating In Volts Per Characteristic
160.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum emitter to base voltage, static, collector open and 140.0 maximum breakdown voltage, collector-to-emitter, base open
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.200 inches nominal
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Electrode Internally-Electrically Connected To Case
anode
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-9
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Overall Diameter
0.370 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Length
0.260 inches maximum