NSN: 5961-00-100-1183
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Voltage Rating In Volts Per Characteristic
275.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open and 275.0 maximum breakdown voltage, collector-to-emitter, base open
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum and 1.500 amperes source cutoff current minimum
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Length
0.250 inches minimum and 0.450 inches maximum
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Power Rating Per Characteristic
57.0 watts small-signal input power, common-collector minimum
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Specification/Standard Data
80131-release6048 professional/industrial association specification