NSN: 5961-00-106-7024
Semiconductor Devices and Associated Hardware
TRANSISTOR
- Texas Instruments Incorporated
- General Electric Co
- Gilbert Engineering Co Inc/Incon
- Freescale Semiconductor Inc.
- Fairchild Semiconductor Corp
- General Semiconductor Inc
- Itt Semiconductors
- Telcom Semiconductor Inc
- U S Army Armament Research &
- Agilent Technologies Inc.
- Philips Circuit Assemblies
- Hewlett Packard Co
- Raytheon Technical Services Company
- Raytheon Company
- British Sarozal Ltd
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.230 inches maximum
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Voltage Rating In Volts Per Characteristic
25.0 maximum breakdown voltage, collector-to-base, emitter open and 20.0 maximum breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Overall Length
0.210 inches maximum
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Semiconductor Material
silicon
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Terminal Length
0.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Terminal Circle Diameter
0.100 inches nominal
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Power Rating Per Characteristic
300.0 milliwatts small-signal input power, common-collector minimum
Related Parts by Category
Related Manufacturers
- Texas Instruments Incorporated
- General Electric Co
- Gilbert Engineering Co Inc/Incon
- Freescale Semiconductor Inc.
- Fairchild Semiconductor Corp
- General Semiconductor Inc
- Itt Semiconductors
- Telcom Semiconductor Inc
- U S Army Armament Research &
- Agilent Technologies Inc.
- Philips Circuit Assemblies
- Hewlett Packard Co
- Raytheon Technical Services Company
- Raytheon Company
- British Sarozal Ltd