NSN: 5961-00-115-8561
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector to emitter, sustained and 60.0 maximum breakdown voltage, collector-to-base, emitter open
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Inclosure Material
glass
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-emitter absolute
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Special Features
high frequency low power silicon npn bjt; junction pattern arrangement: npn
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Mounting Facility Quantity
3
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Features Provided
hermetically sealed case
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Terminal Length
0.200 millimeters maximum
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Semiconductor Material
silicon
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Current Rating Per Characteristic
50.00 nanoamperes zero-gate-voltage source current preset
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Terminal Circle Diameter
0.209 millimeters maximum
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Maximum Operating Temp Per Measurement Point
-55.0 deg celsius case and 175.0 deg celsius case
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Overall Length
0.700 millimeters maximum