NSN: 5961-00-115-8561

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, collector to emitter, sustained and 60.0 maximum breakdown voltage, collector-to-base, emitter open

  • Inclosure Material

    glass

  • Power Rating Per Characteristic

    500.0 milliwatts small-signal input power, common-emitter absolute

  • Special Features

    high frequency low power silicon npn bjt; junction pattern arrangement: npn

  • Mounting Facility Quantity

    3

  • Features Provided

    hermetically sealed case

  • Terminal Length

    0.200 millimeters maximum

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 nanoamperes zero-gate-voltage source current preset

  • Terminal Circle Diameter

    0.209 millimeters maximum

  • Maximum Operating Temp Per Measurement Point

    -55.0 deg celsius case and 175.0 deg celsius case

  • Overall Length

    0.700 millimeters maximum

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