NSN: 5961-00-122-1123
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.285 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Semiconductor Material
silicon
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~1
breakdown voltage, emitter-to-base, collector open and 25.0 maximum breakdown vo
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~2
ltage, collector-to-emitter, base open
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Current Rating Per Characteristic
200.00 milliamperes maximum collector current, dc and 40.00 milliamperes maximum
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Power Rating Per Characteristic
5.0 watts maximum collector power dissipation
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Overall Length
0.212 inches maximum
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
55.0 maximum breakdown voltage, collector-to-base, emitter open and 3.5 maximum
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~1
base current, dc
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Terminal Type And Quantity
4 ribbon