NSN: 5961-00-123-5764
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Overall Length
0.325 inches maximum
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-emitter, base open and 110.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 6.0 maximum emitter to base voltage, static, collector open
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Special Features
junction pattern arrangement: pnp
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Internal Configuration
junction contact
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Overall Diameter
0.830 inches maximum
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
7.50 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Power Rating Per Characteristic
117.0 watts small-signal input power, common-collector minimum