NSN: 5961-00-138-1065

Technical Characteristics

• Inclosure Material

  metal

• Overall Length

  0.170 inches minimum and 0.210 inches maximum

• Terminal Length

  0.500 inches minimum

• Function For Which Designed

  amplifier

• Internal Junction Configuration

  pnp all transistor

• Component Name And Quantity

  2 transistor

• Mounting Method

  terminal

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon all transistor

• ~1

  breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown vo

• Power Rating Per Characteristic

  600.0 milliwatts maximum total power dissipation all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Internal Configuration

  field effect

• Channel Polarity And Control Type

  n-channel junction type

• Terminal Circle Diameter

  0.100 inches maximum

• ~2

  ltage, emitter-to-base, collector open all transistor

• Voltage Rating In Volts Per Characteristic

  50.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum

• Current Rating Per Characteristic

  50.00 milliamperes maximum collector current, dc all transistor

• Terminal Type And Quantity

  6 uninsulated wire lead