NSN: 5961-00-139-9648

Technical Characteristics

• Inclosure Material

  metal

• Overall Length

  0.210 inches maximum

• Terminal Length

  0.500 inches minimum

• Overall Diameter

  0.230 inches maximum

• Internal Configuration

  field effect-dual gate

• Component Name And Quantity

  2 transistor

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.100 inches nominal

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  50.00 milliamperes maximum gate current

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  6 uninsulated wire lead

• Power Rating Per Characteristic

  500.0 milliwatts maximum total device dissipation

• Voltage Rating In Volts Per Characteristic

  50.0 maximum drain to gate voltage and 50.0 maximum drain to source voltage and 50.0 maximum gate to source voltage

• Electrode Internally-Electrically Connected To Case

  collector

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-18

• Channel Polarity And Control Type

  n-channel junction type