NSN: 5961-00-139-9985
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Internal Configuration
junction contact
-
Internal Junction Configuration
npn
-
Mounting Method
terminal
-
~1
breakdown voltage, emitter-to-base, collector open and 4.0 maximum breakdown vo
-
~2
ltage, collector-to-emitter, base open
-
Voltage Rating In Volts Per Characteristic
45.0 maximum breakdown voltage, collector-to-base, emitter open and 45.0 maximum
-
Current Rating Per Characteristic
25.00 milliamperes maximum collector current, dc
-
~1
mitter
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Overall Length
0.260 inches maximum
-
Terminal Length
1.500 inches minimum
-
Overall Diameter
0.370 inches maximum
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
-
Electrode Internally-Electrically Connected To Case
emitter
-
Terminal Circle Diameter
0.200 inches nominal
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Power Rating Per Characteristic
500.0 milliwatts maximum collector power dissipation
-
Transfer Ratio
75.0 maximum small-signal short-circuit forward current transfer ratio, common-e
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction