NSN: 5961-00-153-4421
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
field effect-dual gate
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(Non-Core Data) Channel Polarity And Control Type
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Mounting Method
terminal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Electrode Internally-Electrically Connected To Case
source
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
20.0 maximum drain to source voltage
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Power Rating Per Characteristic
330.0 milliwatts maximum total device dissipation
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Iii Precious Material And Location
terminal surfaces gold
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Iii Precious Material
gold
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Test Data Document
67177-47g3205 specification
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Terminal Type And Quantity
4 uninsulated wire lead