NSN: 5961-00-163-3513
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
50.0 minimum breakdown voltage, collector-to-base, emitter open and 50.0 minimum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 3.5 minimum breakdown voltage, emitter-to-base, collector open
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Test Data Document
67177-47g3220 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Overall Width
0.740 inches minimum and 0.760 inches maximum
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Mounting Method
unthreaded hole
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Power Rating Per Characteristic
20.0 watts forward power dissipation, dc universal and 50.0 watts forward power dissipation, dc pascal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Facility Quantity
2
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Overall Length
0.790 inches minimum and 0.810 inches maximum
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Overall Height
0.145 inches minimum and 0.185 inches maximum
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Inclosure Material
ceramic and metal
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Semiconductor Material
silicon
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Transfer Ratio
20.0 minimum static forward current transfer ratio, common-emitter and 120.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
2 ribbon and 1 case
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Current Rating Per Characteristic
4.00 amperes source cutoff current maximum and 500.00 microamperes zero-gate-voltage source current preset