NSN: 5961-00-165-2063

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Diameter

    0.875 inches maximum

  • Mounting Facility Quantity

    2

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Junction Configuration

    npn

  • Mounting Method

    unthreaded hole

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • ~1

    m breakdown voltage, collector-to-emitter, base open and 7.0 maximum breakdown v

  • ~2

    oltage, emitter-to-base, collector open

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximu

  • ~1

    t, dc

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    1 case and 2 uninsulated wire lead

  • Overall Length

    0.375 inches nominal

  • Current Rating Per Characteristic

    4.00 amperes maximum base current, dc and 10.00 amperes maximum collector curren

  • Power Rating Per Characteristic

    150.0 watts maximum collector power dissipation

  • Special Features

    marking: the jan prefix to the type designation shall be omitted

Certified to
AS6081 Methods

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