NSN: 5961-00-179-4366
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
- Northrop Grumman Guidance And
- Northrop Grumman Guidance And
- National Semiconductor Corp
- Millen James Mfg Co Inc
- Military Specifications
- Military Specifications
- Military Specifications
- Military Specifications
- Bae Systems Information And
- Raytheon Company
- Raytheon Company
- Thales
- Ge Aviation Systems Ltd
- Ge Aviation Systems Ltd
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
70.0 maximum collector to base voltage/static/emitter open all transistor and 60.0 maximum collector to emitter voltage/static/base open all transistor and 6.0 maximum emitter to base voltage, static, collector open all transistor
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Overall Length
0.140 inches minimum and 0.260 inches maximum
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Semiconductor Material
silicon all transistor
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Current Rating Per Characteristic
30.00 milliamperes source cutoff current maximum all transistor
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Terminal Length
0.500 inches minimum and 0.750 inches maximum
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Special Features
all transistor junction pattern arrangement: npn
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Component Name And Quantity
2 transistor
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Terminal Type And Quantity
6 uninsulated wire lead
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Inclosure Material
metal
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Power Rating Per Characteristic
1.25 watts small-signal input power, common-collector preset all transistor
Related Parts by Category
Related Manufacturers
- Northrop Grumman Guidance And
- Northrop Grumman Guidance And
- National Semiconductor Corp
- Millen James Mfg Co Inc
- Military Specifications
- Military Specifications
- Military Specifications
- Military Specifications
- Bae Systems Information And
- Raytheon Company
- Raytheon Company
- Thales
- Ge Aviation Systems Ltd
- Ge Aviation Systems Ltd