NSN: 5961-00-234-7532
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.800 inches maximum
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage,collector-to-base,emitter open and 60.0 maximum breakdown voltage,collector-to-emitter,base open and 7.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
4.00 amperes maximum base current,dc and 10.00 amperes maximum collector current,dc
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Power Rating Per Characteristic
150.0 watts maximum collector power dissipation
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Test Data Document
55972-1c4125-1 drawing
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Inclosure Material
metal
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Overall Length
0.315 inches maximum
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Mounting Facility Quantity
2
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
1 case and 2 pin