NSN: 5961-00-246-2471
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Overall Width Across Flats
1.219 inches nominal
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Nominal Thread Size
0.500 inches
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
200.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 200.0 maximum breakdown voltage, emitter-to-base, collector open
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Power Rating Per Characteristic
250.0 watts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
1 threaded stud and 1 insulated wire lead w/terminal lug and 1 tab, solder lug
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Nondefinitive Spec/Std Data
2n2112 type
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Overall Length
1.125 inches maximum
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Mounting Facility Quantity
1
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Internal Junction Configuration
npn
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Current Rating Per Characteristic
10.00 amperes maximum base current, dc and 10.00 amperes maximum collector current, dc
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Thread Series Designator
unf