NSN: 5961-00-252-1330
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
3.5 maximum breakdown voltage, emitter-to-base, collector open and 55.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Features Provided
hermetically sealed case
-
Power Rating Per Characteristic
108.0 milliwatts small-signal input power, common-collector minimum
-
Semiconductor Material
silicon
-
Current Rating Per Characteristic
2.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum
-
Mounting Facility Quantity
2
-
Overall Length
0.250 inches minimum and 0.340 inches maximum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Specification/Standard Data
80131-release5388 professional/industrial association specification
-
Inclosure Material
metal
-
Terminal Type And Quantity
4 uninsulated wire lead
-
Overall Diameter
0.620 inches maximum