NSN: 5961-00-254-2907
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.260 inches maximum
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Channel Polarity And Control Type
n-channel junction type
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Electrode Internally-Electrically Connected To Case
collector
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
50.0 maximum drain to source voltage and 125.0 maximum breakdown voltage,drain-to-source,with all other terminals short-circuited to source and 75.0 maximum breakdown voltage,gate-to-source,with all other terminals short-circuited to source
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Current Rating Per Characteristic
10.00 milliamperes maximum gate current
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Terminal Type And Quantity
3 uninsulated wire lead
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Terminal Length
1.500 inches minimum
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Overall Diameter
0.370 inches maximum
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Internal Configuration
field effect
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Power Rating Per Characteristic
800.0 milliwatts maximum collector power dissipation
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Specification/Standard Data
80131-release5382 professional/industrial association specification