NSN: 5961-00-324-2912
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
0.165 inches maximum
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Overall Width
0.205 inches maximum
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Internal Configuration
field effect
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
plastic
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Channel Polarity And Control Type
n-channel junction type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-92
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage,drain-to-source,with all other terminals short-circuited to source and 30.0 maximum drain to gate voltage and m30.0 maximum breakdown voltage,gate-to-source,with all other terminals short-circuited to source
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Current Rating Per Characteristic
7.00 milliamperes maximum zero-gate-voltage drain current
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Power Rating Per Characteristic
200.0 milliwatts maximum total power dissipation