NSN: 5961-00-327-4560

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Special Features

  common anode

• Test Data Document

  81413-200985 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Mounting Method

  terminal

• Overall Diameter

  0.230 inches maximum

• Precious Material And Location

  terminal surfaces gold

• Overall Length

  0.210 inches maximum

• Voltage Rating In Volts Per Characteristic

  50.0 maximum reverse voltage, instantaneous all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius case

• Terminal Length

  0.500 inches minimum

• Current Rating Per Characteristic

  300.00 milliamperes source cutoff current preset all semiconductor device diode and 200.00 milliamperes forward current, average absolute all semiconductor device diode and 600.00 milliamperes forward current, average blank all semiconductor device diode

• Inclosure Material

  metal

• Power Rating Per Characteristic

  500.0 milliwatts small-signal input power, common-collector absolute all semiconductor device diode

• Terminal Type And Quantity

  4 uninsulated wire lead

• Component Name And Quantity

  3 semiconductor device diode

• Terminal Circle Diameter

  0.100 inches nominal