NSN: 5961-00-350-1903

Technical Characteristics

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  50.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, emitter-to-base, collector open

• Inclosure Material

  metal

• Terminal Circle Diameter

  0.100 inches nominal

• Electrode Internally-Electrically Connected To Case

  collector

• Terminal Type And Quantity

  3 uninsulated wire lead

• Mounting Method

  terminal

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius ambient air

• Overall Length

  0.065 inches minimum and 0.085 inches maximum

• Special Features

  junction pattern arrangement: pnp

• Power Rating Per Characteristic

  400.0 milliwatts small-signal input power, common-collector minimum

• Internal Configuration

  junction contact

• Features Provided

  hermetically sealed case

• Current Rating Per Characteristic

  200.00 milliamperes source cutoff current maximum