NSN: 5961-00-402-8161
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
400.0 maximum repetitive peak reverse voltage, maximum peak total value and 400.0 maximum breakover voltage, dc and 480.0 maximum nonrepetitive peak reverse voltage, maximum peak total value and 2.0 maximum gate trigger voltage, dc
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Special Features
junction pattern arrangement: pnpn
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Overall Diameter
0.501 inches minimum and 0.510 inches maximum
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Inclosure Material
glass and metal
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Test Data Document
50985-8879600001 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Unpackaged Unit Weight (Non-Core)
8.5 grams
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Overall Length
0.404 inches nominal
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
anode
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Terminal Type And Quantity
2 solder stud and 1 case
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector absolute
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Semiconductor Material
silicon
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~1
forward current, total rms peak
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Current Rating Per Characteristic
35.00 amperes forward current, average maximum of standard range and 10.00 milliamperes forward current, average universal and 80.00 milliamperes forward current, total rms preset and 900.00 amperes source cutoff current absolute and 70.00 milliamperes