NSN: 5961-00-418-3903
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
250.0 milliwatts maximum collector power dissipation
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Current Rating Per Characteristic
100.00 milliamperes maximum collector current, dc
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Mounting Method
terminal
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Internal Junction Configuration
npn
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Overall Diameter
0.222 inches maximum
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Overall Length
0.240 inches maximum
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Inclosure Material
plastic
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 8.0 maximum breakdown voltage, emitter-to-base, collector open
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Semiconductor Material
silicon
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Terminal Circle Diameter
0.100 inches nominal
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Internal Configuration
junction contact
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Terminal Length
0.500 inches minimum