NSN: 5961-00-419-5369
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Junction Configuration
npn
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage,collector-to-base,emitter open and 40.0 maximum breakdown voltage,collector-to-emitter,base open and 3.2 maximum breakdown voltage,emitter-to-base,collector open
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Terminal Type And Quantity
4 uninsulated wire lead
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Power Rating Per Characteristic
200.0 milliwatts maximum collector power dissipation
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Mounting Method
terminal
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Internal Configuration
junction contact
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Overall Diameter
0.240 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Length
0.210 inches maximum
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Inclosure Material
metal