NSN: 5961-00-444-2507
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Internal Configuration
field effect
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Terminal Circle Diameter
0.100 inches nominal
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Field Force Effect Type
electrostatic charge
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Semiconductor Material
silicon
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Terminal Type And Quantity
4 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Power Rating Per Characteristic
250.0 milliwatts maximum total device dissipation
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Current Rating Per Characteristic
30.00 milliamperes maximum drain current
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Voltage Rating In Volts Per Characteristic
-25.0 maximum drain to source voltage and 25.0 nominal drain to gate voltage and 15.0 nominal gate to source voltage
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Features Provided
electrostatic sensitive and hermetically sealed case
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Mounting Method
terminal
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Channel Polarity And Control Type
p-channel insulated gate type
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Function For Which Designed
switching
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Terminal Length
0.500 inches minimum
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Inclosure Material
metal