NSN: 5961-00-449-4230

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    anode

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    0.5 watts small-signal input power, common-collector outside diameter

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    105.0 deg celsius junction

  • Special Features

    junction pattern arrangement: pnpn

  • Overall Diameter

    0.650 inches maximum

  • Voltage Rating In Volts Per Characteristic

    720.0 maximum breakover voltage, dc

  • Terminal Type And Quantity

    1 threaded stud and 2 tab, solder lug

  • Inclosure Material

    metal

  • Nominal Thread Size

    0.250 inches

  • Current Rating Per Characteristic

    80.00 milliamperes forward current, total rms peak

  • Overall Length

    0.505 inches maximum

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Thread Series Designator

    unf

  • Overall Width Across Flats

    0.562 inches maximum

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