NSN: 5961-00-457-7364
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Power Rating Per Characteristic
13.0 watts maximum peak gate power dissipation and 0.5 watts maximum average gate power dissipation
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Voltage Rating In Volts Per Characteristic
600.0 maximum reverse voltage,peak and 700.0 maximum forward voltage,peak
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Internal Junction Configuration
npn
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Internal Configuration
junction contact
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Mounting Facility Quantity
2
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Overall Width
0.700 inches maximum
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Overall Length
1.262 inches maximum
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
105.0 deg celsius case
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Current Rating Per Characteristic
3.20 amperes maximum forward current,average and 5.00 amperes maximum on-state current,rms total and 80.00 amperes maximum peak on-state surge current
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Mounting Method
unthreaded hole
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Electrode Internally-Electrically Connected To Case
anode
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Overall Height
0.340 inches maximum