NSN: 5961-00-464-2499

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Overall Diameter

    0.800 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    0.315 inches minimum

  • Current Rating Per Characteristic

    10.00 milliamperes source cutoff current maximum

  • Features Provided

    hermetically sealed case

  • Terminal Type And Quantity

    2 tab, solder lug and 1 case

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    150.0 watts small-signal input power, common-collector minimum

  • Mounting Facility Quantity

    2

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum breakdown voltage, emitter-to-base, collector open

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

Related Manufacturers

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AS6081 Methods

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