NSN: 5961-00-468-8427

Technical Characteristics

• Current Rating Per Characteristic

  60.00 milliamperes forward current, average maximum single light emitting diode and 3.00 amperes source cutoff current universal single light emitting diode

• Semiconductor Material

  gallium arsenide single light emitting diode

• Overall Length

  0.340 inches nominal

• Power Rating Per Characteristic

  150.0 milliwatts small-signal input power, common-collector absolute single transistor

• Inclosure Material

  plastic

• Mounting Method

  terminal

• Overall Width

  0.250 inches nominal

• Power Rating Per Characteristic

  100.0 milliwatts small-signal input power, common-collector absolute single light emitting diode

• Voltage Rating In Volts Per Characteristic

  30.0 maximum breakdown voltage, collector-to-emitter, base open single transistor and 7.0 maximum breakdown voltage, emitter to collector, base open single transistor

• Precious Material And Location

  plated leads option silver

• Maximum Operating Temp Per Measurement Point

  100.0 deg celsius ambient air

• Test Data Document

  30003-247as-c1848 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Voltage Rating In Volts Per Characteristic

  3.0 maximum reverse voltage, dc single light emitting diode

• Component Name And Quantity

  1 light emitting diode and 1 transistor

• Semiconductor Material

  silicon single transistor

• Special Features

  photoisolator; single transistor junction pattern arrangement: npn; single light emitting diode junction pattern arrangement: pn

• Terminal Type And Quantity

  6 pin

• Overall Height

  0.120 inches nominal