NSN: 5961-00-480-5217
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.340 inches maximum
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Overall Diameter
0.500 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Internal Junction Configuration
pnp
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Current Rating Per Characteristic
5.00 amperes maximum reverse current, total rms
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Power Rating Per Characteristic
40.0 watts maximum total device dissipation
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Precious Material And Location
leads surfaces gold
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
-80.0 maximum collector to base voltage/static/emitter open and -60.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, static, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Precious Material
gold