NSN: 5961-00-493-6115
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Thread Series Designator
unf
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-48
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Test Data Document
18338-113977 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Internal Configuration
junction contact
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Overall Width Across Flats
0.544 inches minimum and 0.562 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Special Features
junction pattern arrangement: pnpn
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Voltage Rating In Volts Per Characteristic
1.2 maximum forward voltage, average and 2.2 maximum forward voltage, peak and 2.0 maximum gate trigger voltage, dc
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Terminal Type And Quantity
1 threaded stud and 2 tab, solder lug
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Inclosure Material
metal
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Nominal Thread Size
0.250 inches
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~1
current, total rms peak
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Mounting Method
threaded stud
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Overall Length
0.330 inches minimum and 0.505 inches maximum
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Mounting Facility Quantity
1
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Current Rating Per Characteristic
150.00 amperes source cutoff current absolute and 35.00 milliamperes forward current, total rms preset and 8.00 milliamperes forward current, average nanoamperes and 8.00 milliamperes source cutoff current outside diameter and 50.00 milliamperes forward