NSN: 5961-00-501-1006
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
3.5 maximum gate to source cutoff voltage and 35.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source
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Features Provided
hermetically sealed case
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Inclosure Material
ceramic and glass
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Internal Configuration
field effect
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Overall Length
0.080 inches maximum
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Terminal Length
0.157 inches minimum
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Power Rating Per Characteristic
175.0 milliwatts small-signal input power, common-collector absolute
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Test Data Document
13499-352-0756 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Current Rating Per Characteristic
15.00 milliamperes zero-gate-voltage source current megawatts
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.210 inches maximum
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Channel Polarity And Control Type (Non-Core)
n-channel junction type