NSN: 5961-00-559-4873

Semiconductor Devices and Associated Hardware

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5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open and 100.0 maximum breakdown voltage, collector-to-emitter, base open

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    1.573 inches maximum

  • Current Rating Per Characteristic

    12.00 amperes source cutoff current maximum and 200.00 milliamperes source cutoff current minimum

  • Special Features

    junction pattern arrangement: pnp

  • Internal Configuration

    junction contact

  • Overall Height

    0.315 inches maximum

  • Features Provided

    hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    150.0 watts small-signal input power, common-collector minimum

  • Terminal Type And Quantity

    1 case and 2 uninsulated wire lead

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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