NSN: 5961-00-563-6881

Technical Characteristics

• Inclosure Material

  metal

• Overall Diameter

  0.370 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-5

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.200 inches nominal

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon all transistor

• ~1

  breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown vo

• ~2

  ltage, emitter-to-base, collector open all transistor

• Voltage Rating In Volts Per Characteristic

  60.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum

• Power Rating Per Characteristic

  800.0 milliwatts maximum total device dissipation all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  6 uninsulated wire lead

• Transfer Ratio

  50.0 minimum static forward current transfer ratio, common-emitter all transisto

• ~1

  r

• Current Rating Per Characteristic

  800.00 milliamperes maximum collector current, dc all transistor

• Component Name And Quantity

  2 transistor

• Internal Junction Configuration

  npn all transistor

• Internal Configuration

  junction contact all transistor

• Terminal Length

  1.500 inches minimum

• Overall Length

  0.260 inches maximum