NSN: 5961-00-756-6815
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Internal Configuration
unijunction
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Current Rating Per Characteristic
2.00 amperes source cutoff current maximum
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Overall Diameter
0.285 inches nominal
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Special Features
junction pattern arrangement: npn
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector preset
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
5.0 maximum breakdown voltage, collector-to-emitter, base open and 40.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, emitter-to-base, collector open
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Inclosure Material
glass and metal
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Mounting Method
unthreaded hole
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Overall Length
1.005 inches nominal