NSN: 5961-00-793-4136
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.410 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
open and 100.0 maximum breakdown voltage,collector-to-base,emitter open
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Voltage Rating In Volts Per Characteristic
75.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to emitter and 100.0 maximum breakdown voltage,collector-to-emitter,with specified circuit between base and emitter and 50.0 maximum breakdown voltage,collector-to-emitter,base
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Current Rating Per Characteristic
2.00 milliamperes maximum collector cutoff current,dc,emitter open
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Power Rating Per Characteristic
90.0 watts maximum collector power dissipation
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Terminal Type And Quantity
2 pin and 1 case
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Overall Diameter
0.800 inches maximum
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Internal Junction Configuration
npn
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction