NSN: 5961-00-810-2763
Semiconductor Devices and Associated Hardware
TRANSISTOR
- Lockheed Martin Corporation
- Westinghouse Electric Corp
- Raytheon Company
- Raytheon Company
- Silicon Transistor Corp
- Csr Industries Inc
- Electronic Transistors Corp
- Slater Electric Inc
- Solid State Devices Inc.
- Solid Power Corp
- Lockheed Martin Corporation
- Api Electronics, Inc.
- Westinghouse Electric Corp
- Westinghouse Electric Corp
- Electronic Industries Association
- Electronic Industries Association
- Raytheon Company
- Raytheon Company
- Sundstrand Corp
- Hamilton Sundstrand Corporation
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
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Specification/Standard Data
80131-fia2700 professional/industrial association standard
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
150.0 maximum breakdown voltage, collector-to-emitter, base open
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
7.50 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector minimum
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Overall Diameter
1.280 inches maximum
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Terminal Type And Quantity
1 uninsulated wire lead and 2 solder stud
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Overall Height
0.560 inches maximum
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Internal Junction Configuration
npn
Related Parts by Category
Related Manufacturers
- Lockheed Martin Corporation
- Westinghouse Electric Corp
- Raytheon Company
- Raytheon Company
- Silicon Transistor Corp
- Csr Industries Inc
- Electronic Transistors Corp
- Slater Electric Inc
- Solid State Devices Inc.
- Solid Power Corp
- Lockheed Martin Corporation
- Api Electronics, Inc.
- Westinghouse Electric Corp
- Westinghouse Electric Corp
- Electronic Industries Association
- Electronic Industries Association
- Raytheon Company
- Raytheon Company
- Sundstrand Corp
- Hamilton Sundstrand Corporation