NSN: 5961-00-824-3884

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Component Function Relationship

  matched

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air all semiconductor device diode

• Overall Length

  0.425 inches minimum all semiconductor device diode and 0.465 inches maximum all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Overall Width

  0.300 inches maximum all semiconductor device diode

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• Terminal Length

  0.900 inches minimum all semiconductor device diode

• Component Name And Quantity

  4 semiconductor device diode

• Special Features

  c/o 2 pair matched w/in 20 milliamps fwd current,ea pair in pkg as described.

• Inclosure Material

  plastic all semiconductor device diode

• ~1

  forward current, dc nanoamperes all semiconductor

• Current Rating Per Characteristic

  500.00 milliamperes collector current, dc preset all semiconductor device diode and 75.00 milliamperes drain current megahertz all semiconductor device diode and 225.00 milliamperes all primaries preset all semiconductor device diode and 2.00 amperes

• Mounting Method

  terminal all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  50.0 nominal working peak reverse voltage, maximum peak total value all semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• Overall Height

  0.165 inches minimum all semiconductor device diode and 0.200 inches maximum all semiconductor device diode