NSN: 5961-00-831-2955
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Circle Diameter
0.200 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
breakdown voltage,emitter-to-base,collector open
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage,collector-to-base,emitter open and 35.0 maximum breakdown voltage,collector-to-emitter,with specified resistance between base and emitter and 30.0 maximum breakdown voltage,collector-to-emitter,base open and 5.2 maximum
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Current Rating Per Characteristic
1.00 amperes maximum collector current,dc and 600.00 milliamperes maximum base current,dc
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Precious Material And Location
leads gold
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.300 inches maximum
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Terminal Length
1.500 inches minimum
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Power Rating Per Characteristic
2.0 watts maximum collector power dissipation
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Precious Material
gold