NSN: 5961-00-839-1690

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Diameter

    0.370 inches maximum

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5

  • Internal Junction Configuration

    pnp

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 milliamperes maximum collector current,dc

  • Maximum Operating Temp Per Measurement Point

    165.0 deg celsius junction

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Power Rating Per Characteristic

    250.0 milliwatts maximum total power dissipation

  • Voltage Rating In Volts Per Characteristic

    20.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to emitter and 20.0 maximum breakdown voltage,collector-to-emitter,base open

  • Terminal Length

    1.500 inches minimum

  • Overall Length

    0.260 inches maximum

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